Dielectric constant of GaAs during a subpicosecond laser-induced phase transition

Y. Siegal, E. N. Glezer, and E. Mazur
Phys. Rev. B 49, 16403 – Published 15 June 1994
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Abstract

We measured the time evolution of the real and imaginary parts of the dielectric constant of GaAs following femtosecond laser pulse excitation. The data show a collapse of the average optical gap, or average bonding-antibonding energy-level separation. The rate of collapse increases with pump fluence. The decrease in the gap indicates that the pump beam induces a structural transformation from a covalent, tetrahedrally coordinated crystal to a phase with metallic cohesive properties.

  • Received 10 February 1994

DOI:https://doi.org/10.1103/PhysRevB.49.16403

©1994 American Physical Society

Authors & Affiliations

Y. Siegal, E. N. Glezer, and E. Mazur

  • Department of Physics and Division of Applied Sciences, Harvard University, Cambridge, Massachusetts 02138

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Vol. 49, Iss. 23 — 15 June 1994

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