Observation of carrier-concentration-dependent reflectionless tunneling in a superconductor–two-dimensional-electron-gas–superconductor structure

S. J. M. Bakker; E. van der Drift; T. M. Klapwijk; H. M. Jaeger; S. Radelaar

doi:10.1103/PhysRevB.49.13275

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Observation of carrier-concentration-dependent reflectionless tunneling in a superconductor–two-dimensional-electron-gas–superconductor structure

S. J. M. Bakker, E. van der Drift, T. M. Klapwijk, H. M. Jaeger, and S. Radelaar

Phys. Rev. B 49, 13275(R) – Published 1 May 1994

Abstract

We report on the conductance of a short (<100 nm) silicon-based two-dimensional electron gas with superconducting source and drain electrodes. Below 1 K a zero-bias enhanced conductance is observed which depends on the carrier concentration in the electron gas. The data can qualitatively be understood as due to reflectionless tunneling; i.e., quantum-coherent-enhanced Andreev scattering.

Received 6 April 1994

DOI:https://doi.org/10.1103/PhysRevB.49.13275

Authors & Affiliations

S. J. M. Bakker and E. van der Drift

Delft Institute for Micro Electronics and Submicron Technology (DIMES), Delft University of Technology, P.O. Box 5046, 2600 GA Delft, The Netherlands

T. M. Klapwijk

Department of Applied Physics and Materials Science Centre, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands

H. M. Jaeger

James Franck Institute and Department of Physics, The University of Chicago, 5640 South Ellis Avenue, Chicago, Illinois 60637

S. Radelaar

Delft Institute for Micro Electronics and Submicron Technology (DIMES), Delft University of Technology, P.O. Box 5046, 2600 GA Delft, The Netherlands

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Vol. 49, Iss. 18 — 1 May 1994

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