Band structure and semiconducting properties of FeSi

L. F. Mattheiss and D. R. Hamann
Phys. Rev. B 47, 13114 – Published 15 May 1993
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Abstract

The results of linear augmented-plane-wave band calculations for cubic FeSi, carried out in the local-density approximation, predict a small (∼0.11 eV) indirect semiconductor gap which agrees well with empirical estimates (∼0.13 eV). The origin of this gap, which occurs within the Fe (3d) manifold, can be traced to a pseudogap that is present in the reference rocksalt phase that underlies the lower-symmetry FeSi structure. The relationship between the FeSi band structure and several types of many-body correlation mechanisms that have been advanced to explain its anomalous temperature-dependent magnetic properties is discussed.

  • Received 21 December 1992

DOI:https://doi.org/10.1103/PhysRevB.47.13114

©1993 American Physical Society

Authors & Affiliations

L. F. Mattheiss and D. R. Hamann

  • AT&T Bell Laboratories, Murray Hill, New Jersey 07974

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Vol. 47, Iss. 20 — 15 May 1993

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