Positron diffusion in zinc-blende-type semiconductors

Ravi P. Singh and M. Singh
Phys. Rev. B 45, 9179 – Published 15 April 1992

Abstract

A theory of positron diffusion in the presence of positron scattering with acoustic, piezoelectric-acoustic, and optical phonons in zinc-blende-type semiconductors is developed. The velocity-velocity correlation function is used to calculate the diffusion coefficient and the Green’s function is used to calculate the correlation function. In this formulation the relaxation time automatically appears through the imaginary part of the self-energy. The effect of screening is included within the Thomas-Fermi approximation. The theory is used to calculate the energy relaxation time and diffusion length of positrons in GaAs. It is shown that the transverse and longitudinal phonons contribute almost the same amount towards the relaxation time in the piezoelectric-acoustic-phonon scattering of positrons. It is also found that the contribution of piezoelectric-acoustic-phonon scattering is about 10% to that of acoustic-phonon scattering at low temperatures. We obtained a fairly good agreement between our theory and experimental results available to us. It is found that optical-phonon scattering plays an important role in getting good agreement between theory and experiment at high temperatures.

  • Received 2 August 1991

DOI:https://doi.org/10.1103/PhysRevB.45.9179

©1992 American Physical Society

Authors & Affiliations

Ravi P. Singh and M. Singh

  • Department of Physics, University of Western Ontario, London, Ontario, Canada N6A 3K7

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Vol. 45, Iss. 16 — 15 April 1992

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