Reply to ‘‘Comment on ‘Negative-U property of the DX center in <math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mrow><msub><mrow><mi mathvariant="normal">Al</mi></mrow><mrow><mi mathvariant="italic">x</mi></mrow></msub></mrow></math><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mrow><msub><mrow><mi mathvariant="normal">Ga</mi></mrow><mrow><mn>1</mn><mi mathvariant="normal">−</mi><mi mathvariant="italic">x</mi></mrow></msub></mrow></math>As:Si’ ’’

M. F. Li; P. Y. Yu; Y. B. Jia; J. Zhou; J. L. Gao

doi:10.1103/PhysRevB.42.9711

Reply to ‘‘Comment on ‘Negative-U property of the DX center in ${Al}_{x}$ ${Ga}_{1 - x}$ As:Si’ ’’

M. F. Li, P. Y. Yu, Y. B. Jia, J. Zhou, and J. L. Gao

Phys. Rev. B 42, 9711 – Published 15 November 1990

Abstract

Dmochowski (preceding Comment) has suggested that the shallow donor level we proposed in our earlier paper [Phys. Rev. B 40, 1430 (1989)] could be a negative-U center. While this proposal is possible, it will require a number of modifications in our calculations also.

Received 2 May 1990

DOI:https://doi.org/10.1103/PhysRevB.42.9711

Authors & Affiliations

M. F. Li and P. Y. Yu

Department of Physics, University of California, Berkeley, California 94720
Materials and Chemical Sciences Division, Lawrence Berkeley Laboratory, Berkeley, California 94720

Y. B. Jia

Graduate School, University of Science and Technology of China, Beijing, People’s Republic of China

J. Zhou and J. L. Gao

Institute of Semiconductors, Academia Sinica, Beijing, People’s Republic of China

Original Article

Negative-U property of the DX center in ${Al}_{x}$ ${Ga}_{1 - x}$ As:Si

M. F. Li, Y. B. Jia, P. Y. Yu, J. Zhou, and J. L. Gao

Phys. Rev. B 40, 1430(R) (1989)

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Vol. 42, Iss. 15 — 15 November 1990

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