Well-width dependence of photoluminescence excitation spectra in GaAs-AlxGa1xAs quantum wells

N. Ogasawara, A. Fujiwara, N. Ohgushi, S. Fukatsu, Y. Shiraki, Y. Katayama, and R. Ito
Phys. Rev. B 42, 9562 – Published 15 November 1990
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Abstract

Photoluminescence excitation spectra of high-quality GaAs-Al0.3Ga0.7As quantum wells with various widths have been measured at 77 K. It has been found that the luminescent intensity for excitation photon energies exceeding the barrier band-gap energy exhibits an oscillatory behavior against the well width. The results clearly show that the trapping efficiency of the excited electrons into a well strongly depends on the well width through the resonance and off resonance of the quantum-well levels with the conduction-band bottom of the barrier.

  • Received 12 July 1990

DOI:https://doi.org/10.1103/PhysRevB.42.9562

©1990 American Physical Society

Authors & Affiliations

N. Ogasawara, A. Fujiwara, and N. Ohgushi

  • Department of Applied Physics, Faculty of Engineering, The University of Tokyo, Bunkyo-ku, Tokyo, Japan

S. Fukatsu, Y. Shiraki, Y. Katayama, and R. Ito

  • Research Center for Advanced Science and Technology, The University of Tokyo, Meguro-ku, Tokyo, Japan

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Vol. 42, Iss. 15 — 15 November 1990

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