Valley-mixing effects in (GaAs)l(AlAs)m superlattices with microscopically imperfect interfaces

I. Morrison, L. D. L. Brown, and M. Jaros
Phys. Rev. B 42, 11818 – Published 15 December 1990
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Abstract

We report the first full-scale calculation of the subband structure along the cubic axes of GaAs-AlAs superlattices with microscopically imperfect interfaces. We show that the valley-mixing effects can be used as a sensitive probe of the interface disorder whose characteristic dimension is of order of the bulk lattice constant. It would appear that our predictions concerning the effect of disorder on the optical spectra of small-period structures are in close agreement with recent experimental data.

  • Received 6 August 1990

DOI:https://doi.org/10.1103/PhysRevB.42.11818

©1990 American Physical Society

Authors & Affiliations

I. Morrison, L. D. L. Brown, and M. Jaros

  • Department of Physics, The University of Newcastle upon Tyne, Newcastle upon Tyne NE1 7RU, United Kingdom

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Issue

Vol. 42, Iss. 18 — 15 December 1990

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