Using an extension of the Gutzwiller approximation, we calculated the density of states, magnetic moment, and the antiferromagnetic ground-state energy of high-${\mathit{T}}_{\mathit{c}}$ copper oxides. The Hubbard Hamiltonian used for the calculations includes hopping between oxygen atoms as well as Cu-O hopping. It is shown that hopping between oxygen atoms is particularly significant for the magnetic properties. The effect of doping, on-site hole repulsion, and charge-transfer energy on the local density of states, magnetic moment of Cu, and antiferromagnetic ground-state energy is studied in detail.

• Received 23 April 1990

DOI:https://doi.org/10.1103/PhysRevB.42.10192