Weak localization effects in the amorphous alloys V1xXx (X=Si,Ge,Sn)

J. C. Ousset, V. Dupuis, H. Rakoto, J. M. Broto, G. Marchal, N. Cherradi, and A. Audouard
Phys. Rev. B 39, 4484 – Published 1 March 1989
PDFExport Citation

Abstract

In this paper we present high-field magnetoresistance measurements on a series of amorphous alloys V1xXx (X=Si,Ge,Sn). We have observed weak localization effects in both superconducting and nonsuperconducting alloys and obtained values for the spin-orbit scattering rate. We show that the concentration dependence of the spin-orbit coupling cannot be simply explained and suggest that other scattering mechanisms must be taken into account to describe the magnetoresistance of these alloys.

  • Received 19 October 1988

DOI:https://doi.org/10.1103/PhysRevB.39.4484

©1989 American Physical Society

Authors & Affiliations

J. C. Ousset, V. Dupuis, H. Rakoto, and J. M. Broto

  • Service des Champs Magnétiques Intenses et Laboratoire de Physique des Solides, Institut National des Sciences Appliquées, avenue de Rangueil, 31077 Toulouse CEDEX, France

G. Marchal, N. Cherradi, and A. Audouard

  • Laboratoire de Physique des Solides, Université de Nancy I, 54506 Vandoeuvre, France

References (Subscription Required)

Click to Expand
Issue

Vol. 39, Iss. 7 — 1 March 1989

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×