Zero-resistance state in GaAs-Ga1xAlxAs heterojunctions: Evidence for nearest-neighbor hopping processes

J. L. Robert, A. Raymond, J. Y. Mulot, C. Bousquet, W. Zawadzki, M. Kubisa, and J. P. Andre
Phys. Rev. B 39, 1832 – Published 15 January 1989
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Abstract

Measurements of the conductivity σxx on GaAs-Ga1xAlxAs heterostructures have been performed in the quantum Hall regime at integer filling factors ν using shunted bridge geometry. The dependences on 1/ν (2<ν<16) as well as on temperature (1.4 K<T<4.2 K) have been investigated. Hydrostatic pressure has been used as a means to vary the two-dimensional electron density. Our results show evidence for the nearest-neighbor hopping processes, never before observed in two-dimensional structures in the presence of a magnetic field. The observations are attributed to thermal electron excitations from the Fermi energy in the middle of the Landau gap to a band of localized states, whose energy is proportional to magnetic field. This interpretation is closely related to recent cyclotron-resonance measurements on similar heterostructures. The experimental dependences are qualitatively explained by a model assuming Coulomb character of the localized centers.

  • Received 3 August 1988

DOI:https://doi.org/10.1103/PhysRevB.39.1832

©1989 American Physical Society

Authors & Affiliations

J. L. Robert, A. Raymond, J. Y. Mulot, and C. Bousquet

  • Groupe d’Etudes des Semiconducteurs, Université des Sciences et Techniques du Languedoc, 34060 Montpellier, France

W. Zawadzki and M. Kubisa

  • Institute of Physics, Polish Academy of Sciences, PL-02-668 Warsaw, Poland

J. P. Andre

  • Laboratoire d’Electronique et de Physique Appliquée, 94451 Limeil-Brevannes, France

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Vol. 39, Iss. 3 — 15 January 1989

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