Excitonic absorption in modulation-doped GaAs/AlxGa1xAs quantum wells

D. Huang, H. Y. Chu, Y. C. Chang, R. Houdré, and H. Morkoç
Phys. Rev. B 38, 1246 – Published 15 July 1988
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Abstract

We have performed transmission measurements in a range of undoped through heavily-modulation-doped GaAs/AlxGa1xAs multiple-quantum-well structures. The observed absorption spectra demonstrate quenching of the excitonic oscillations with increasing quasi-two-dimensional electron gas. The electron density corresponding to the total bleaching of the lowest excitonic oscillation is greater than or equal to 3×1011 cm2 for a quantum well size of 200 Å. Theoretical calculations of the absorption spectra which include the effect of carrier screening have been made. The results show that both long-range and short-range many-body effects should be included to explain the experimentally observed spectra. In the modulation-doped case, we conclude that the phase-space filling and exchange of the electron gas are the dominant effects on excitonic absorption. From the observation that the linewidth increases with the electron density, we demonstrate that the exciton lifetime reduces due to the interaction between the electrons and the excitons.

  • Received 13 November 1987

DOI:https://doi.org/10.1103/PhysRevB.38.1246

©1988 American Physical Society

Authors & Affiliations

D. Huang, H. Y. Chu, Y. C. Chang, R. Houdré, and H. Morkoç

  • Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, 1101 West Springfield Avenue, Urbana, Illinois 61801-3082

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Issue

Vol. 38, Iss. 2 — 15 July 1988

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