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Expansion of the electron-hole plasma in Si: A picosecond time-resolved Raman probe

K. T. Tsen and O. F. Sankey
Phys. Rev. B 37, 4321(R) – Published 15 March 1988
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Abstract

The expansion velocity of the photoexcited electron-hole plasma in a Si crystal has been measured by time-resolved Raman scattering on a picosecond time scale with 1-μm spatial resolution. The observed transient density-time profile of the plasma can be fit by a modified diffusion equation based on a hydrodynamic model, which takes into account the driftlike motion of the plasma and proper boundary conditions. The deduced drift velocity of the plasma is shown to depend strongly on lattice temperature as well as plasma density.

  • Received 16 October 1987

DOI:https://doi.org/10.1103/PhysRevB.37.4321

©1988 American Physical Society

Authors & Affiliations

K. T. Tsen and O. F. Sankey

  • Department of Physics, Arizona State University, Tempe, Arizona 85287

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Vol. 37, Iss. 8 — 15 March 1988

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