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Well-resolved higher excited states of the light- and heavy-hole free excitons in a 225-Å AlxGa1xAs-GaAs multi-quantum-well structure

D. C. Reynolds, K. K. Bajaj, C. Leak, G. Peters, W. Theis, P. W. Yu, K. Alavi, C. Colvard, and I. Shidlovsky
Phys. Rev. B 37, 3117(R) – Published 15 February 1988
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Abstract

Several excited states of the light- and heavy-hole free excitons have been observed in a 225-Å Al0.35Ga0.65As-GaAs multi-quantum-well (MQW) structure using photoluminescence excitation spectroscopy. The 2s and 3s states of both the heavy-hole free exciton, as well as of the light-hole free exciton, were identified. The measured values of the difference in energy between the ground state 1s and the 2s state of both the heavy-hole and the light-hole free excitons agree with their calculated values. The binding energy of the 3s state is estimated using a hydrogen model, and the differences in energy between the 1s state and the 3s state of both the heavy-hole and the light-hole free excitons thus obtained are compared with their measured values. Magnetic field measurements were also made to verify the transition assignments.

  • Received 11 November 1987

DOI:https://doi.org/10.1103/PhysRevB.37.3117

©1988 American Physical Society

Authors & Affiliations

D. C. Reynolds, K. K. Bajaj, C. Leak, and G. Peters

  • U.S. Air Force Wright Aeronautical Laboratories, Avionics Laboratory, Wright-Patterson Air Force Base, Ohio 45433

W. Theis and P. W. Yu

  • University Research Center Wright State University, Dayton, Ohio 45435

K. Alavi, C. Colvard, and I. Shidlovsky

  • Siemens Research and Technology Laboratories, Princeton, New Jersey 08540

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Vol. 37, Iss. 6 — 15 February 1988

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