Effect of a parallel magnetic field on tunneling in GaAs/AlxGa1xAs heterostructures

John A. Lebens, Robert H. Silsbee, and Steven L. Wright
Phys. Rev. B 37, 10308 – Published 15 June 1988
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Abstract

The tunneling of electrons between a quantum well and n+ electrode is observed for various well densities and magnetic fields aligned parallel to the interfaces. We find that the maximum in the tunneling conductance shifts to higher well densities as the field is increased. Considerations of energy and transverse-momentum conservation in the presence of a parallel field predict a threshold in the tunneling conductance, in agreement with our data.

  • Received 9 November 1987

DOI:https://doi.org/10.1103/PhysRevB.37.10308

©1988 American Physical Society

Authors & Affiliations

John A. Lebens and Robert H. Silsbee

  • Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, New York 14853

Steven L. Wright

  • IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598

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Issue

Vol. 37, Iss. 17 — 15 June 1988

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