The weak direct-gap luminescence originating from the Γ valley of ${\mathrm{GaAs}}_{1\mathrm{-}\mathrm{x}}$${\mathrm{P}}_{\mathrm{x}}$ indirect-gap alloys is observed. Incident energy dependence and polarization correlation of the luminescence with the exciting light are presented. The luminescence is interpreted as recombination of hot electrons, with strong momentum anisotropy, on acceptors. The dynamics of conduction electrons in the Γ valley can be discussed.

• Received 21 November 1985

DOI:https://doi.org/10.1103/PhysRevB.33.5623