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Conductance anomaly in a GaAs/Ga0.77Al0.23As heterojunction

E. J. Pakulis and F. F. Fang
Phys. Rev. B 33, 2916(R) – Published 15 February 1986
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Abstract

We have observed a sharp drop by several percent in the conductance of a GaAs/Ga0.77Al0.23As heterojunction with decreasing temperature near 4 K. The width of the transition is approximately 0.5 K. The transition has a strong magnetic field dependence which is both anisotropic and hysteretic. Below the transition the dc conductivity is strongly non-Ohmic. We attribute this striking behavior to the formation of a mixed density wave, involving both charge- and spin-density-wave characteristics.

  • Received 19 November 1985

DOI:https://doi.org/10.1103/PhysRevB.33.2916

©1986 American Physical Society

Authors & Affiliations

E. J. Pakulis and F. F. Fang

  • IBM Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598

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Vol. 33, Iss. 4 — 15 February 1986

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