Experiments involving the epitaxial growth of ${\mathrm{NiSi}}_2$ films on Si{111} and the subsequent growth of epitaxial Si films are described. Low-energy electron diffraction reveals that the latter films have a structure similar to that of a quenched Si{111}1×1 phase, albeit with considerable distortions, and have the same orientation as the original Si{111} substrate even when the silicide is inverted (type B). Heat treatments spur the diffusion of Si into the ${\mathrm{NiSi}}_2$ substrate and leave the surface covered with relatively thick Si islands before the fully bare ${\mathrm{NiSi}}_2${111} surface is recovered.

• Received 25 July 1985

DOI:https://doi.org/10.1103/PhysRevB.32.6956