We study the temperature and voltage dependence of current density in hybrid poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS)/$\mathrm{Si}$ heterojunctions. It is shown that charge transport follows distinct mechanisms at reverse and forward bias. The current is found to be injection limited at reverse bias owing to the quasi-Schottky-barrier at the organic-inorganic interface. At forward bias, the carrier transport is governed by space-charge-limited current in PEDOT:PSS. Trap-limited current at low forward bias is associated with trap states in the organic layer. The total density and the characteristic energy of localized states of PEDOT:PSS are estimated as $N_t\simeq 5.6\times {10}^{15}{\mathrm{cm}}^{-3}$ and $E_{\mathrm{ch}}\simeq 0.107\mathrm{eV}$, respectively. The commonly observed double-logarithmic character at forward bias is interpreted as the signature of transition from the Mark-Helfrich regime to the Mott-Gurney regime.

• Received 16 April 2019
• Revised 17 June 2019

DOI:https://doi.org/10.1103/PhysRevApplied.12.034002