We measured the ionization and the fluctuations in ionization produced in a Si(Li) detector by silicon atoms at five particular kinetic energies ranging from about 4 to 109 keV. The method is simple and precise, yet untried until now, and provides excellent calibration points for silicon. Our results are in good agreement with the predictions of Lindhard et al. [Mat. Fys. Medd. 33, 10 (1963)].

• Received 29 July 1991

DOI:https://doi.org/10.1103/PhysRevA.45.2104