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Role of electron-phonon coupling in excitonic insulator candidate Ta2NiSe5

Cheng Chen, Xiang Chen, Weichen Tang, Zhenglu Li, Siqi Wang, Shuhan Ding, Zhibo Kang, Chris Jozwiak, Aaron Bostwick, Eli Rotenberg, Makoto Hashimoto, Donghui Lu, Jacob P. C. Ruff, Steven G. Louie, Robert J. Birgeneau, Yulin Chen, Yao Wang, and Yu He
Phys. Rev. Research 5, 043089 – Published 26 October 2023
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Abstract

Electron-hole bound pairs, or excitons, are common excitations in semiconductors. They can spontaneously form and condense into a new insulating ground state—the so-called excitonic insulator—when the energy of electron-hole Coulomb attraction exceeds the band gap. In the presence of electron-phonon coupling, a periodic lattice distortion often concomitantly occurs. However, a similar structural transition can also be induced by electron-phonon coupling itself, therefore hindering the clean identification of bulk excitonic insulators (e.g., which instability is the driving force of the phase transition). Using high-resolution synchrotron x-ray diffraction and angle-resolved photoemission spectroscopy, we identify key electron-phonon coupling effects in a leading excitonic insulator candidate Ta2NiSe5. These include an extensive unidirectional lattice fluctuation and an electronic pseudogap in the normal state, as well as a negative electronic compressibility in the charge-doped broken-symmetry state. In combination with first principles and model calculations, we use the normal state electronic spectra to quantitatively determine the electron-phonon interaction vertex g and interband Coulomb interaction V in the minimal lattice model, the solution to which captures the experimental observations. Moreover, we show how the Coulomb and electron-phonon coupling effects can be unambiguously separated based on the solution to quantified microscopic models. Finally, we discuss how the strong lattice fluctuations enabled by low dimensionality relate to the unique electron-phonon interaction effects beyond the textbook Born-Oppenheimer approximation..

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  • Received 9 April 2023
  • Accepted 11 October 2023

DOI:https://doi.org/10.1103/PhysRevResearch.5.043089

Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.

Published by the American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Cheng Chen1,2,*, Xiang Chen3,4,*, Weichen Tang3,4, Zhenglu Li3,4, Siqi Wang2, Shuhan Ding5, Zhibo Kang2, Chris Jozwiak6, Aaron Bostwick6, Eli Rotenberg6, Makoto Hashimoto7, Donghui Lu7, Jacob P. C. Ruff8, Steven G. Louie3,4, Robert J. Birgeneau3,4,9, Yulin Chen1, Yao Wang5,10,†, and Yu He2,‡

  • 1Department of Physics, University of Oxford, Oxford OX1 3PU, United Kingdom
  • 2Department of Applied Physics, Yale University, New Haven, Connecticut 06511, USA
  • 3Physics Department, University of California, Berkeley, California 94720, USA
  • 4Materials Sciences Division, Lawrence Berkeley National Lab, Berkeley, California 94720, USA
  • 5Department of Physics and Astronomy, Clemson University, Clemson, South Carolina 29631, USA
  • 6Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
  • 7Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA
  • 8Cornell High Energy Synchrotron Source, Cornell University, Ithaca, New York 14853, USA
  • 9Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
  • 10Department of Chemistry, Emory University, Atlanta, Georgia 30322, USA

  • *These authors contributed equally to this work.
  • yao.wang@emory.edu
  • yu.he@yale.edu

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Issue

Vol. 5, Iss. 4 — October - December 2023

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