Room-temperature magnetization reversal and magnetocaloric switching in Fe substituted GdMnO3

Arnab Pal, Manu Mohan, Adyam Venimadhav, and Pattukkannu Murugavel
Phys. Rev. Materials 4, 044407 – Published 24 April 2020
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Abstract

Room-temperature tunable bipolar magnetization switching and magnetically switchable magnetocaloric phenomena having numerous application potentials are reported in GdMn1xFexO3 (x=0.55 and 0.60) polycrystalline samples. Substitution of Fe in antiferromagnetic GdMnO3 induces a first-order spin-reorientation transition (TSR), which along with antiferromagnetic ordering transition (TN) gives rise to anomalies in dielectric spectra, a signature of magnetodielectric effect. Temperature-dependent Raman spectra confirm the spin-phonon coupling which could be the origin of the magnetodielectric effect in the system. Notably, low-field magnetically tunable magnetization reversal is found to appear between TSR and TN in these compounds owing to the competition between single-ion magnetic anisotropy and antisymmetric Dzyaloshinsky-Moriya interaction. Additionally, the GdMn0.40Fe0.60O3 sample reveals the coexistence of magnetically switchable conventional and inverse magnetocaloric effect at 250 and 310 K. The tailoring of these coexisting room-temperature magnetization reversal and magnetocaloric phenomena in a single-phase system suggests a route to design the material suitable for potential applications in electromagnetic and memory devices.

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  • Received 7 November 2019
  • Revised 13 February 2020
  • Accepted 27 March 2020

DOI:https://doi.org/10.1103/PhysRevMaterials.4.044407

©2020 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Arnab Pal1,*, Manu Mohan1, Adyam Venimadhav2, and Pattukkannu Murugavel1,†

  • 1Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India
  • 2Cryogenic Engineering Centre, Indian Institute of Technology Kharagpur, Kharagpur 721302, India

  • *Present address: Materials Genome Institute, Shanghai University, Shanghai 200444, China.
  • muruga@iitm.ac.in

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Issue

Vol. 4, Iss. 4 — April 2020

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