Abstract
thin-film stacks were grown by a combination of molecular beam epitaxy and solid-phase epitaxy (Ge on ). The stacks were analyzed using electron microscopy, electron diffraction, and synchrotron x-ray diffraction. The Ge(Fe,Si) films crystallize in the well-oriented, layered tetragonal structure with space group . This kind of structure does not exist as a bulk material and is stabilized by the solid-phase epitaxy of Ge on . We interpret this as an ordering phenomenon induced by minimization of the elastic energy of the epitaxial film.
- Received 11 April 2018
DOI:https://doi.org/10.1103/PhysRevMaterials.2.051402
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