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Elastically frustrated rehybridization: Origin of chemical order and compositional limits in InGaN quantum wells

L. Lymperakis, T. Schulz, C. Freysoldt, M. Anikeeva, Z. Chen, X. Zheng, B. Shen, C. Chèze, M. Siekacz, X. Q. Wang, M. Albrecht, and J. Neugebauer
Phys. Rev. Materials 2, 011601(R) – Published 8 January 2018
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Abstract

Nominal InN monolayers grown by molecular beam epitaxy on GaN(0001) are investigated combining in situ reflection high-energy electron diffraction (RHEED), transmission electron microscopy (TEM), and density functional theory (DFT). TEM reveals a chemical intraplane ordering never observed before. Employing DFT, we identify a novel surface stabilization mechanism elastically frustrated rehybridization, which is responsible for the observed chemical ordering. The mechanism also sets an incorporation barrier for indium concentrations above 25% and thus fundamentally limits the indium content in coherently strained layers.

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  • Received 16 May 2017
  • Revised 14 July 2017

DOI:https://doi.org/10.1103/PhysRevMaterials.2.011601

©2018 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

L. Lymperakis1,*, T. Schulz2,†, C. Freysoldt1, M. Anikeeva2, Z. Chen3, X. Zheng3, B. Shen3, C. Chèze4, M. Siekacz5, X. Q. Wang3,6,‡, M. Albrecht2, and J. Neugebauer1

  • 1Max-Planck-Institut für Eisenforschung GmbH, Max-Planck-Straße 1, 40237 Düsseldorf, Germany
  • 2Leibniz-Institute for Crystal Growth, Max-Born-Straße 2, 12489 Berlin, Germany
  • 3State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
  • 4Paul Drude Institute für Festkörperelektronik, Hausvogteiplatz 5-7, 10117, Berlin, Germany
  • 5Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland
  • 6Collaborative Innovation Center of Quantum Matter, Beijing, China

  • *Corresponding author: lymperakis@mpie.de
  • Corresponding author: tobias.schulz@ikz-berlin.de
  • Corresponding author: wangshi@pku.edu.cn

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Vol. 2, Iss. 1 — January 2018

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