Interplay between Carrier and Impurity Concentrations in Annealed Ga1xMnxAs: Intrinsic Anomalous Hall Effect

S. H. Chun, Y. S. Kim, H. K. Choi, I. T. Jeong, W. O. Lee, K. S. Suh, Y S. Oh, K. H. Kim, Z. G. Khim, J. C. Woo, and Y. D. Park
Phys. Rev. Lett. 98, 026601 – Published 9 January 2007

Abstract

Investigating the scaling behavior of annealed Ga1xMnxAs anomalous Hall coefficients, we note a universal crossover regime where the scaling behavior changes from quadratic to linear. Furthermore, measured anomalous Hall conductivities in the quadratic regime when properly scaled by carrier concentration remain constant, spanning nearly a decade in conductivity as well as over 100 K in TC and comparing favorably to theoretically predicated values for the intrinsic origins of the anomalous Hall effect. Both qualitative and quantitative agreements strongly point to the validity of new equations of motion including the Berry phase contributions as well as the tunability of the anomalous Hall effect.

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  • Received 29 March 2006

DOI:https://doi.org/10.1103/PhysRevLett.98.026601

©2007 American Physical Society

Authors & Affiliations

S. H. Chun1,2,3, Y. S. Kim4, H. K. Choi3,4, I. T. Jeong4, W. O. Lee3,4, K. S. Suh3,4, Y S. Oh3,4, K. H. Kim3,4, Z. G. Khim4, J. C. Woo4, and Y. D. Park3,4,*

  • 1Department of Physics and Institute of Fundamental Physics, Sejong University, Seoul 143-747, Korea
  • 2Future Technology Research Division, Korea Institute of Science and Technology, Seoul 130-791, Korea
  • 3CSCMR, Seoul National University NS 53, Seoul 151-747, Korea
  • 4Department of Physics and Astronomy, Seoul National University NS 50, Seoul 151-747, Korea

  • *Electronic address: parkyd@phya.snu.ac.kr

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Vol. 98, Iss. 2 — 12 January 2007

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