Controlling Planar and Vertical Ordering in Three-Dimensional (In,Ga)As Quantum Dot Lattices by GaAs Surface Orientation

M. Schmidbauer, Sh. Seydmohamadi, D. Grigoriev, Zh. M. Wang, Yu. I. Mazur, P. Schäfer, M. Hanke, R. Köhler, and G. J. Salamo
Phys. Rev. Lett. 96, 066108 – Published 15 February 2006

Abstract

Anisotropic surface diffusion and strain are used to explain the formation of three-dimensional (In,Ga)As quantum dot lattices. The diffusion characteristics of the surface, coupled with the elastic anisotropy of the matrix, provides an excellent opportunity to influence the dot positions. In particular, quantum dots that are laterally organized into long chains or chessboard two-dimensional arrays vertically organized with strict vertical ordering or vertical ordering that is inclined to the sample surface normal are accurately predicted and observed.

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  • Received 26 August 2005

DOI:https://doi.org/10.1103/PhysRevLett.96.066108

©2006 American Physical Society

Authors & Affiliations

M. Schmidbauer1, Sh. Seydmohamadi2, D. Grigoriev3, Zh. M. Wang2, Yu. I. Mazur2, P. Schäfer3, M. Hanke4, R. Köhler3, and G. J. Salamo2

  • 1Institut für Kristallzüchtung, D-12489 Berlin, Germany
  • 2Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701, USA
  • 3Institut für Physik, Humboldt-Universität zu Berlin, D-12489 Berlin, Germany
  • 4Martin-Luther-Universität Halle-Wittenberg, D-06120 Halle/Saale, Germany

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Issue

Vol. 96, Iss. 6 — 17 February 2006

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