Less Strain Energy despite Fewer Misfit Dislocations: The Impact of Ordering

Th. Schmidt, R. Kröger, J. I. Flege, T. Clausen, J. Falta, A. Janzen, P. Zahl, P. Kury, M. Kammler, and M. Horn-von Hoegen

Phys. Rev. Lett. 96, 066101 – Published 13 February 2006

Abstract

The average strain state of Ge films grown on Si(111) by surfactant mediated epitaxy has been compared to the ordering of the interfacial misfit dislocation network. Surprisingly, a smaller degree of average lattice relaxation was found in films grown at higher temperature. On the other hand, these films exhibit a better ordered dislocation network. This effect energetically compensates the higher strain at higher growth temperature, leading to the conclusion that, apart from the formation of misfit dislocations, their ordering represents an important channel for lattice-strain energy relaxation.

Received 10 August 2005

DOI:https://doi.org/10.1103/PhysRevLett.96.066101

Authors & Affiliations

Th. Schmidt^*, R. Kröger, J. I. Flege, T. Clausen, and J. Falta

Institute of Solid State Physics, University of Bremen, Otto-Hahn-Allee 1, 28359 Bremen, Germany

A. Janzen, P. Zahl^†, P. Kury, M. Kammler, and M. Horn-von Hoegen

Institute of Laser and Plasma Physics, University of Duisburg-Essen, Universitätsstrasse 5, 45117 Essen, Germany

^*Electronic mail: tschmidt@physik.uni-bremen.de
^†Present address: Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY 11973-5000, USA.

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Vol. 96, Iss. 6 — 17 February 2006

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