Ultrafast Laser-Induced Phase Transitions in Amorphous GeSb Films

J. P. Callan, A. M.-T. Kim, C. A. D. Roeser, E. Mazur, J. Solis, J. Siegel, C. N. Afonso, and J. C. G. de Sande
Phys. Rev. Lett. 86, 3650 – Published 16 April 2001
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Abstract

Time-resolved measurements of the spectral dielectric function reveal new information about ultrafast phase transitions induced by femtosecond laser pulses in Sb-rich amorphous GeSb films. The excitation generates a nonthermal phase within 200 fs. The dielectric function of this phase differs from that of the crystalline phase, contrary to previous suggestions of a disorder-to-order transition. The observed dielectric function is close to that of the liquid phase, indicating an ultrafast transition from the amorphous phase to a different disordered state.

  • Received 15 September 2000

DOI:https://doi.org/10.1103/PhysRevLett.86.3650

©2001 American Physical Society

Authors & Affiliations

J. P. Callan*, A. M.-T. Kim, C. A. D. Roeser, and E. Mazur

  • Department of Physics and Division of Engineering and Applied Sciences, Gordon McKay Laboratory, Harvard University, 9 Oxford Street, Cambridge, Massachusetts 02138

J. Solis, J. Siegel, and C. N. Afonso

  • Instituto de Optica, CSIC, Serrano 121, 28006-Madrid, Spain

J. C. G. de Sande

  • Departamento de Ingeniería de Circuitos y Sistemas, E.U.I.T.T., U.P.M., Carretera de Valencia km 7.5, 28031-Madrid, Spain

  • *Electronic address: paul_callan@post.harvard.edu

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Vol. 86, Iss. 16 — 16 April 2001

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