Electron-Irradiation-Induced Radiolytic Oxygen Generation and Microsegregation in Silicon Dioxide Polymorphs

Marion A. Stevens-Kalceff
Phys. Rev. Lett. 84, 3137 – Published 3 April 2000
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Abstract

The first direct in situ observations of the production and microsegregation of radiolytic interstitial oxygen resulting from electron beam irradiation of crystal and amorphous oxygen deficient SiO2 polymorphs has been made using cathodoluminescence (CL) microanalysis (spectroscopy and microscopy). Previously unreported near-infrared CL emission is observed at 0.968±0.003eV from crystal αSiO2 (quartz) and at 0.971±0.003eV from amorphous aSiO2 (fused quartz and silica glasses) at 290 K. The energy and width of the near-infrared CL emission from electron-irradiated αSiO2 polymorphs is consistent with the O2 Δg1Σg3 transition associated with molecular oxygen.

  • Received 29 October 1999

DOI:https://doi.org/10.1103/PhysRevLett.84.3137

©2000 American Physical Society

Authors & Affiliations

Marion A. Stevens-Kalceff*

  • Microstructural Analysis Unit, Faculty of Science, University of Technology, Sydney, P.O. Box 123, Broadway, Sydney, New South Wales 2007, Australia

  • *Electronic address: Marion.Stevens-Kalceff@uts.edu.au

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Vol. 84, Iss. 14 — 3 April 2000

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