Abstract
The transient supersaturation in a system undergoing Ostwald ripening is related to the cluster formation energy as a function of cluster size . We use this relation to study the energetics of self-interstitial clusters in Si. Measurements of transient enhanced diffusion of B in Si-implanted Si are used to determine , and inverse modeling is used to derive . For clusters with , , close to the fault energy of defects. For clusters with , is typically 0.5 eV higher, but stabler clusters exist at ( ) and ( ).
- Received 22 December 1998
DOI:https://doi.org/10.1103/PhysRevLett.82.4460
©1999 American Physical Society