From Exciton Resonance to Frequency Mixing in GaAs Multiple Quantum Wells

Y. H. Ahn, J. S. Yahng, J. Y. Sohn, K. J. Yee, S. C. Hohng, J. C. Woo, D. S. Kim, T. Meier, S. W. Koch, Y. S. Lim, and E. K. Kim
Phys. Rev. Lett. 82, 3879 – Published 10 May 1999
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Abstract

Frequency mixing ( 2ω1ω2) is demonstrated in femtosecond nondegenerate four-wave mixing (FWM) on GaAs multiple quantum wells using two synchronized, independently tunable lasers. The frequency mixing component in the spectrally resolved FWM coexists with the exciton resonance, and it dominates over the exciton component at high intensity and high detuning. This off-resonant component is present only for delays smaller than the temporal pulse width, whereas the resonant exciton component survives for longer delays.

  • Received 15 January 1999

DOI:https://doi.org/10.1103/PhysRevLett.82.3879

©1999 American Physical Society

Authors & Affiliations

Y. H. Ahn, J. S. Yahng, J. Y. Sohn, K. J. Yee, S. C. Hohng, J. C. Woo, and D. S. Kim*

  • Department of Physics, Seoul National University, Seoul 151-742, Korea

T. Meier and S. W. Koch

  • Fachbereich Physik und Wissenschaftliches Zentrum für Materialwissenschaften, Philipps-Universität Marburg, Renthof 5, D-35032 Marburg, Germany

Y. S. Lim

  • Department of Applied Physics, Konkuk University, Chungju, Chungbook 380-701, Korea

E. K. Kim

  • Korea Institute of Science and Technology, Cheongryang, Seoul 136-791, Korea

  • *Corresponding author.Electronic address: denny@phya.snu.ac.kr

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Vol. 82, Iss. 19 — 10 May 1999

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