Electron-Lattice Interaction on <span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mi>α</mi><mi>−</mi><mi>Ga</mi><mo>(</mo><mn>010</mn><mo>)</mo></math></span>

Ph. Hofmann; Y. Q. Cai; Ch. Grütter; J. H. Bilgram

doi:10.1103/PhysRevLett.81.1670

Electron-Lattice Interaction on $α - Ga (010)$

Ph. Hofmann, Y. Q. Cai, Ch. Grütter, and J. H. Bilgram

Phys. Rev. Lett. 81, 1670 – Published 24 August 1998

Abstract

We have investigated the (010) surface of $α - Ga$ by angle-resolved photoemission and low energy electron diffraction. We find a surface state around the $\bar{C}$ point of the surface Brillouin zone. The electron-phonon coupling at this surface is very strong with an electron-phonon mass enhancement parameter of $λ = 1.4 \pm 0.10$ . Our spectra show high background intensity in a projected bulk band gap which cannot be accounted for by defect scattering and is therefore interpreted as indicating a nonquasiparticle behavior. Upon cooling the sample below 220 K we observe a phase transition accompanied by spectral changes near the Fermi level.

Received 2 December 1997

DOI:https://doi.org/10.1103/PhysRevLett.81.1670

Authors & Affiliations

Ph. Hofmann

Fritz-Haber-Institut der Max-Planck-Gesellschaft, 14195 Berlin-Dahlem, Germany
and Institute for Storage Ring Facilities, University of Aarhus, 8000 Aarhus C, Denmark

Y. Q. Cai^*