Direct Measurements of the Spin Gap in the Two-Dimensional Electron Gas of AlGaAs-GaAs Heterojunctions

V. T. Dolgopolov, A. A. Shashkin, A. V. Aristov, D. Schmerek, W. Hansen, J. P. Kotthaus, and M. Holland
Phys. Rev. Lett. 79, 729 – Published 28 July 1997
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Abstract

Using magnetocapacitance data, we directly determine the chemical potential jump at low temperatures of about 25 mK when the filling factor traverses the spin gap at ν=1 and the cyclotron gap at ν=2. The chemical potential jump for the cyclotron gap is found to increase proportionally to the magnetic field with a slope that is determined by an effective mass 0.071m0. The data yield a spin gap that also increases proportionally with magnetic field and is described by an enhanced Landé factor g5.2. This result has not been explained by existing theoretical models.

  • Received 24 February 1997

DOI:https://doi.org/10.1103/PhysRevLett.79.729

©1997 American Physical Society

Authors & Affiliations

V. T. Dolgopolov, A. A. Shashkin, and A. V. Aristov

  • Institute of Solid State Physics, Chernogolovka, 142432 Moscow District, Russia

D. Schmerek and W. Hansen

  • Institut für Angewandte Physik, Universität Hamburg, Jungiusstrasse 11, D-20355 Hamburg, Germany

J. P. Kotthaus

  • Ludwig-Maximilians-Universität, Geschwister-Scholl-Platz 1, D-80539 München, Germany

M. Holland

  • Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8QQ, United Kingdom

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Issue

Vol. 79, Iss. 4 — 28 July 1997

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