Abstract
Submonolayer island-size distributions are obtained with scanning tunneling microscopy and used to infer the nucleation and growth kinetics of islands on the three low-index surfaces of GaAs. Comparison with Monte Carlo simulations reveals that on the (110) and surfaces, random nucleation is followed by the attachment and detachment of single atoms at island edges. But on the (001) surface (using ), nucleation is initiated in the trenches of the reconstruction by pairs of Ga atoms. Growth then proceeds over locally filled trenches, also by the capture of pairs of Ga atoms.
- Received 20 June 1997
DOI:https://doi.org/10.1103/PhysRevLett.79.3938
©1997 American Physical Society