Abstract
We use combined variable temperature scanning tunneling microscopy and spectroscopy, and angle-resolved photoemission spectroscopy experiments to study transition between two β-SiC(100) surface structures. We observe a reversible temperature-dependent phase transition from a semiconducting surface at 25 °C to a metallic structure at 400 °C. This transition results from temperature-induced disruption of the structure composed of alternately up and down dimers into a structure having all dimers at the same height giving a symmetry. This arrangement favors electronic orbital overlap between Si top surface atoms leading to surface metallization.
- Received 27 May 1997
DOI:https://doi.org/10.1103/PhysRevLett.79.3700
©1997 American Physical Society