Giant Permittivity in Epitaxial Ferroelectric Heterostructures

A. Erbil, Y. Kim, and R. A. Gerhardt
Phys. Rev. Lett. 77, 1628 – Published 19 August 1996
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Abstract

A giant permittivity associated with the motion of domain walls is reported in epitaxial hetero- structures having alternating layers of ferroelectric and nonferroelectric oxides. At low frequencies, permittivities as high as 420 000 are found. Real and imaginary parts of the dielectric constant show large dispersion at high frequencies. In dc measurements, a nonlinear resistance is observed with a well-defined threshold field correlated with the dc bias-field dependence of ac permittivities. We interpret the observations as a result of the motion of a pinned domain wall lattice at low electric fields and sliding-mode motion at high electric fields.

  • Received 17 April 1996

DOI:https://doi.org/10.1103/PhysRevLett.77.1628

©1996 American Physical Society

Authors & Affiliations

A. Erbil1, Y. Kim1, and R. A. Gerhardt2

  • 1School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332
  • 2Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332

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Vol. 77, Iss. 8 — 19 August 1996

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