Inverse spin-valve-type magnetoresistance in spin engineered multilayered structures

J. M. George, L. G. Pereira, A. Barthélémy, F. Petroff, L. Steren, J. L. Duvail, A. Fert, R. Loloee, P. Holody, and P. A. Schroeder
Phys. Rev. Lett. 72, 408 – Published 17 January 1994
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Abstract

The resistivity of magnetic multilayers is generally smaller when the magnetizations of successive layers are parallel, which is the so-called giant magnetoresistance or spin-valve effect. We have been able to reverse this effect and to obtain a smaller resistivity for an antiparallel arrangement by intercalating thin Cr layers within half of the Fe layers in Fe/Cu multilayers. This inverse spin-valve effect is due to the inverse spin asymmetries of the electron scattering in successive Fe layers with and without Cr. This is a confirmation of the fundamental mechanism of the giant magnetoresistance.

  • Received 28 July 1993

DOI:https://doi.org/10.1103/PhysRevLett.72.408

©1994 American Physical Society

Authors & Affiliations

J. M. George, L. G. Pereira, A. Barthélémy, F. Petroff, L. Steren, J. L. Duvail, and A. Fert

  • Laboratoire de Physique des Solides, Bâtiment 510, Université Paris(enSud, 91405 Orsay Cedex, France

R. Loloee, P. Holody, and P. A. Schroeder

  • Department of Physics and Astronomy and Center for Fundamental Materials Research, Michigan State University, East Lansing, Michigan 48824

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Vol. 72, Iss. 3 — 17 January 1994

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