Quasiparticle energies in semiconductors: Self-energy correction to the local-density approximation

F. Gygi and A. Baldereschi
Phys. Rev. Lett. 62, 2160 – Published 1 May 1989
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Abstract

A model self-energy correction to the local-density approximation is derived from the GW approximation of the self-energy operator. Excitation energies calculated in diamond, Si, Ge, GaAs, and AlAs compare favorably with those obtained with the full GW approximation. Results for GaP are close to experimental data. It is shown that the model consists of a ‘‘scissor’’ operator and additional nonrigid corrections.

  • Received 22 December 1988

DOI:https://doi.org/10.1103/PhysRevLett.62.2160

©1989 American Physical Society

Authors & Affiliations

F. Gygi and A. Baldereschi

  • Institut de Physique Appliquée, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland Dipartimento di Fisica Teorica e Gruppo Nazionale di Struttura della Materia-Consiglio Nazionale delle Ricerche, Università di Trieste, Italy

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Issue

Vol. 62, Iss. 18 — 1 May 1989

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