A model for film growth from hyperthermal (≊1–${10}^3$ eV) species impinging on substrates is proposed. The process includes subsurface implantation, energy loss, preferential displacement of atoms with low displacement energies ($E_d$) leaving high $E_d$ atoms undisplaced, and sputtering of substrate material. Epitaxial growth and preferred orientation result from the angular dependence of the $E_d$ and the host mold effect. The model, supported by ion trajectory calculations and experimental data, is applied to diamond film formation from ${\mathrm{C}}^{+}$ ions.

• Received 1 August 1988

DOI:https://doi.org/10.1103/PhysRevLett.62.1290