Solute Trapping: Comparison of Theory with Experiment

M. J. Aziz; J. Y. Tsao; M. O. Thompson; P. S. Peercy; C. W. White

doi:10.1103/PhysRevLett.56.2489

Solute Trapping: Comparison of Theory with Experiment

M. J. Aziz, J. Y. Tsao, M. O. Thompson, P. S. Peercy, and C. W. White

Phys. Rev. Lett. 56, 2489 – Published 9 June 1986

Abstract

The dependence of the nonequilibrium partition coefficient $k$ of Bi in Si upon solidification velocity $v$ has been measured with sufficient accuracy to distinguish between proposed solute-trapping mechanisms. For the range of measured velocities, 2-14 m/s, we observe a much more gradual increase in $k$ with increasing $v$ than those previously reported and no evidence for a "saturation" effect, i.e., $\frac{dk}{dv} \to 0$ at $k < 1$ . The continuous-growth model of Aziz fits the data quite well; the Aziz stepwise-growth model and the two-level Baker model yield values of $\frac{dk}{dv}$ that are too high.

Received 19 December 1985

DOI:https://doi.org/10.1103/PhysRevLett.56.2489

Authors & Affiliations

M. J. Aziz^1,*, J. Y. Tsao², M. O. Thompson³, P. S. Peercy², and C. W. White¹

¹Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
²Sandia National Laboratories, Albuquerque, New Mexico 87185
³Department of Materials Science, Cornell University, Ithaca, New York 14853