Abstract
I propose kinetically determined topological models of lightly doped () amorphous alloys (). Without adjustable parameters the model relates the lowest concentration of hydrogen atoms required to quench paramagnetic dangling bonds to the concentration of unpaired spins at . Also discussed are the structural differences between freshly evaporated -(Ge, Si) and various stages of ion-bombarded ("amorphized") crystalline material.
- Received 25 January 1979
DOI:https://doi.org/10.1103/PhysRevLett.42.1151
©1979 American Physical Society