Photoelastic Tensor of Silicon and the Volume Dependence of the Average Gap

David K. Biegelsen
Phys. Rev. Lett. 32, 1196 – Published 27 May 1974; Erratum Phys. Rev. Lett. 33, 51 (1974)
PDFExport Citation

Abstract

The first accurate measurements of the algebraic values of the photoelastic tensor of silicon are reported. The values, determined acousto-optically, are p1111=0.094, p1122=+0.017, and p1212=0.051. The results are in strong disagreement with calculations based on the Phillips-Van Vechten theory of ionicity. It is shown that the widely used assumption of a universal power law describing both the intermaterial and intramaterial variations of the homopolar average energy gap with volume must be reinterpreted or revised.

  • Received 4 February 1974

DOI:https://doi.org/10.1103/PhysRevLett.32.1196

©1974 American Physical Society

Erratum

Authors & Affiliations

David K. Biegelsen

  • Xerox Palo Alto Research Center, Palo Alto, California 94304

References (Subscription Required)

Click to Expand
Issue

Vol. 32, Iss. 21 — 27 May 1974

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Letters

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×