Reversible Electrical Switching Phenomena in Disordered Structures

Stanford R. Ovshinsky
Phys. Rev. Lett. 21, 1450 – Published 11 November 1968
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Abstract

A rapid and reversible transition between a highly resistive and conductive state effected by an electric field, which we have observed in various types of disordered semiconducting material, is described in detail. The switching parameters and chemical composition of a typical material are presented, and microscopic mechanisms for the conduction phenomena are suggested.

  • Received 23 August 1968

DOI:https://doi.org/10.1103/PhysRevLett.21.1450

©1968 American Physical Society

Authors & Affiliations

Stanford R. Ovshinsky

  • Energy Conversion Devices, Inc., Troy, Michigan

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Vol. 21, Iss. 20 — 11 November 1968

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