Observation of Anderson Localization in Ultrathin Films of Three-Dimensional Topological Insulators

Jian Liao, Yunbo Ou, Xiao Feng, Shuo Yang, Chaojing Lin, Wenmin Yang, Kehui Wu, Ke He, Xucun Ma, Qi-Kun Xue, and Yongqing Li
Phys. Rev. Lett. 114, 216601 – Published 28 May 2015
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Abstract

Anderson localization, the absence of diffusive transport in disordered systems, has been manifested as hopping transport in numerous electronic systems, whereas in recently discovered topological insulators it has not been directly observed. Here, we report experimental demonstration of a crossover from diffusive transport in the weak antilocalization regime to variable range hopping transport in the Anderson localization regime with ultrathin (Bi1xSbx)2Te3 films. As disorder becomes stronger, negative magnetoconductivity due to the weak antilocalization is gradually suppressed, and eventually, positive magnetoconductivity emerges when the electron system becomes strongly localized. This work reveals the critical role of disorder in the quantum transport properties of ultrathin topological insulator films, in which theories have predicted rich physics related to topological phase transitions.

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  • Received 10 February 2015

DOI:https://doi.org/10.1103/PhysRevLett.114.216601

© 2015 American Physical Society

Authors & Affiliations

Jian Liao1, Yunbo Ou1, Xiao Feng2, Shuo Yang1, Chaojing Lin1, Wenmin Yang1, Kehui Wu1, Ke He2,*, Xucun Ma2, Qi-Kun Xue2, and Yongqing Li1,†

  • 1Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
  • 2State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China

  • *kehe@tsinghua.edu.cn
  • yqli@iphy.ac.cn

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Issue

Vol. 114, Iss. 21 — 29 May 2015

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