Disorder Driven Metal-Insulator Transition in BaPb1xBixO3 and Inference of Disorder-Free Critical Temperature

Katherine Luna, Paula Giraldo-Gallo, Theodore Geballe, Ian Fisher, and Malcolm Beasley
Phys. Rev. Lett. 113, 177004 – Published 21 October 2014
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Abstract

We performed point-contact spectroscopy tunneling measurements on single crystal BaPb1xBixO3 for 0x0.28 at temperatures T=240K and find a suppression in the density of states at low bias voltages that is characteristic of disordered metals. Both the correlation gap and the zero-temperature conductivity are zero at a critical concentration xc=0.30. Not only does this suggests that a disorder driven metal-insulator transition occurs before the onset of the charge disproportionated charge density wave insulator, but we also explore whether a scaling theory is applicable. In addition, we estimate the disorder-free critical temperature and compare these results to Ba1xKxBiO3.

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  • Received 17 November 2013

DOI:https://doi.org/10.1103/PhysRevLett.113.177004

© 2014 American Physical Society

Authors & Affiliations

Katherine Luna, Paula Giraldo-Gallo, Theodore Geballe, Ian Fisher, and Malcolm Beasley

  • Department of Physics, Stanford University, Stanford, California 94305-4045, USA

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Issue

Vol. 113, Iss. 17 — 24 October 2014

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