Phys. Rev. Lett. 110, 149901 (2013) - Erratum: Atomic and Electronic Structure of Ultrathin Bi(111) Films Grown on ${\mathrm{Bi}}_{2}{\mathrm{Te}}_{3}(111)$ Substrates: Evidence for a Strain-Induced Topological Phase Transition [Phys. Rev. Lett. 109, 227401 (2012)]

Erratum: Atomic and Electronic Structure of Ultrathin Bi(111) Films Grown on ${Bi}_{2} {Te}_{3} (111)$ Substrates: Evidence for a Strain-Induced Topological Phase Transition [Phys. Rev. Lett. 109, 227401 (2012)]

T. Hirahara, N. Fukui, T. Shirasawa, M. Yamada, M. Aitani, H. Miyazaki, M. Matsunami, S. Kimura, T. Takahashi, S. Hasegawa, and K. Kobayashi

Phys. Rev. Lett. 110, 149901 – Published 3 April 2013

Abstract

Received 4 March 2013

DOI:https://doi.org/10.1103/PhysRevLett.110.149901

© 2013 American Physical Society

Authors & Affiliations

T. Hirahara, N. Fukui, T. Shirasawa, M. Yamada, M. Aitani, H. Miyazaki, M. Matsunami, S. Kimura, T. Takahashi, S. Hasegawa, and K. Kobayashi

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Original Article

Atomic and Electronic Structure of Ultrathin Bi(111) Films Grown on ${Bi}_{2} {Te}_{3} (111)$ Substrates: Evidence for a Strain-Induced Topological Phase Transition

T. Hirahara, N. Fukui, T. Shirasawa, M. Yamada, M. Aitani, H. Miyazaki, M. Matsunami, S. Kimura, T. Takahashi, S. Hasegawa, and K. Kobayashi

Phys. Rev. Lett. 109, 227401 (2012)

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Vol. 110, Iss. 14 — 5 April 2013

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