Evidence for Helical Edge Modes in Inverted InAs/GaSb Quantum Wells

Ivan Knez, Rui-Rui Du, and Gerard Sullivan
Phys. Rev. Lett. 107, 136603 – Published 19 September 2011

Abstract

We present an experimental study of low temperature electronic transport in the hybridization gap of inverted InAs/GaSb composite quantum wells. An electrostatic gate is used to push the Fermi level into the gap regime, where the conductance as a function of sample length and width is measured. Our analysis shows strong evidence for the existence of helical edge modes proposed by Liu et al [Phys. Rev. Lett. 100, 236601 (2008)]. Edge modes persist in spite of sizable bulk conduction and show only a weak magnetic field dependence—a direct consequence of a gap opening away from the zone center.

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  • Received 29 April 2011

DOI:https://doi.org/10.1103/PhysRevLett.107.136603

© 2011 American Physical Society

Authors & Affiliations

Ivan Knez and Rui-Rui Du

  • Department of Physics and Astronomy, Rice University, Houston, Texas 77251-1892, USA

Gerard Sullivan

  • Teledyne Scientific and Imaging, Thousand Oaks, California 91630, USA

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Issue

Vol. 107, Iss. 13 — 23 September 2011

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