Decomposition Controlled by Surface Morphology during Langmuir Evaporation of GaAs

J. Tersoff, D. E. Jesson, and W. X. Tang
Phys. Rev. Lett. 105, 035702 – Published 14 July 2010
PDFHTMLExport Citation

Abstract

When GaAs is heated in vacuum, it decomposes into Ga and As as it evaporates. Real-time in situ surface electron microscopy reveals striking bursts of “daughter” droplet nucleation and growth when coalescence of large “parent” droplets exposes nonplanar surface regions. We analyze the behavior, predicting a morphology-dependent congruent evaporation temperature. Based on this we propose a new approach for the self-assembly and positioning of quantum structures via droplet epitaxy, which we demonstrate at the proof-of-concept level.

  • Figure
  • Figure
  • Figure
  • Received 24 March 2010

DOI:https://doi.org/10.1103/PhysRevLett.105.035702

©2010 American Physical Society

Authors & Affiliations

J. Tersoff1,*, D. E. Jesson2,†, and W. X. Tang2

  • 1IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USA
  • 2School of Physics, Monash University, Victoria 3800, Australia

  • *tersoff@us.ibm.com
  • david.jesson@monash.edu

Article Text (Subscription Required)

Click to Expand

Supplemental Material (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 105, Iss. 3 — 16 July 2010

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Letters

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×