Quantum Hall Effect near the Charge Neutrality Point in a Two-Dimensional Electron-Hole System

G. M. Gusev, E. B. Olshanetsky, Z. D. Kvon, N. N. Mikhailov, S. A. Dvoretsky, and J. C. Portal
Phys. Rev. Lett. 104, 166401 – Published 20 April 2010

Abstract

We study the transport properties of HgTe-based quantum wells containing simultaneously electrons and holes in a magnetic field B. At the charge neutrality point (CNP) with nearly equal electron and hole densities, the resistance is found to increase very strongly with B while the Hall resistivity turns to zero. This behavior results in a wide plateau in the Hall conductivity σxy0 and in a minimum of diagonal conductivity σxx at ν=νpνn=0, where νn and νp are the electron and hole Landau level filling factors. We suggest that the transport at the CNP point is determined by electron-hole “snake states” propagating along the ν=0 lines. Our observations are qualitatively similar to the quantum Hall effect in graphene as well as to the transport in a random magnetic field with a zero mean value.

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  • Received 3 September 2009

DOI:https://doi.org/10.1103/PhysRevLett.104.166401

©2010 American Physical Society

Authors & Affiliations

G. M. Gusev1, E. B. Olshanetsky1,2, Z. D. Kvon2, N. N. Mikhailov2, S. A. Dvoretsky2, and J. C. Portal3,4,5

  • 1Instituto de Física da Universidade de São Paulo, 135960-170, São Paulo, SP, Brazil
  • 2Institute of Semiconductor Physics, Novosibirsk 630090, Russia
  • 3LNCMI-CNRS, UPR 3228, BP 166, 38042 Grenoble Cedex 9, France
  • 4INSA Toulouse, 31077 Toulouse Cedex 4, France
  • 5Institut Universitaire de France, 75005 Paris, France

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Issue

Vol. 104, Iss. 16 — 23 April 2010

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