Proper Scaling of the Anomalous Hall Effect

Yuan Tian, Li Ye, and Xiaofeng Jin
Phys. Rev. Lett. 103, 087206 – Published 21 August 2009

Abstract

Working with epitaxial films of Fe, we succeeded in independent control of different scattering processes in the anomalous Hall effect. The result clearly exposed the fundamental flaws of the conventional scaling ρAH=f(ρxx) between the anomalous Hall resistivity and longitudinal resistivity. A new scaling ρAH=f(ρxx0,ρxx) that also involves the residual resistivity has been established which helps identify the intrinsic and extrinsic mechanisms of the anomalous Hall effect.

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  • Received 30 March 2009

DOI:https://doi.org/10.1103/PhysRevLett.103.087206

©2009 American Physical Society

Authors & Affiliations

Yuan Tian, Li Ye, and Xiaofeng Jin*

  • Surface Physics Laboratory and Physics Department, Fudan University, Shanghai 200433, China

  • *Corresponding author. xfjin@fudan.edu.cn

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Vol. 103, Iss. 8 — 21 August 2009

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