A planar pattern forming semiconductor gas-discharge device is examined. While being driven with a stationary voltage, it generates patterns that contain domains oscillating with different frequencies. The multioscillatory pattern is formed in a sequence of bifurcations from the homogeneous stationary state. A nonlinear interaction between different parts of the pattern can be detected. It is suggested that the observed behavior is due to the coupling of processes in two nonlinear components, the gas-discharge gap and the semiconductor cathode fabricated from high resistance gallium arsenide.

• Received 24 February 2001

DOI:https://doi.org/10.1103/PhysRevE.65.066210